| 摘要 |
PURPOSE:To form a non-injection region easily at the step of crystal growth, and to improve the reproducibility of characteristics, yield on manufacture and reliability by forming sections, height thereof differs in the laser resonant-axis direction, in a mesa stripe containing an active layer and forming a current block layer with the exception of only a section, mesa height thereof is high. CONSTITUTION:A mesa stripe 9 containing an active layer, which emits light and recombines, and two parallel etching grooves 7, 8 holding the mesa stripe are formed in parallel in the <011> direction to a DH wafer. In this case, the width of the mesa stripe 9 is brought to 1.5mum in the vicinity of the active layer 4, and depth is brought to approximately 2.5mum and width approximately 10mum in both the etching grooves 7, 8. A photo-resist film is formed in parallel in the <011> direction, and the mesa strip 9 is etched so as to form a stepped difference. N-InP Current block layers 10, 11 are formed with the exception of only the upper surface of a section, height thereof is high, of the mesa stripe 9, and a P-InP buried layer 12 and an electrode layer 13 are laminated on the whole surface. |
