| 摘要 |
PURPOSE:To make a low heat resisting adhesive applicable and to reduce diffusion of boron into epitaxial silicon film by a method wherein a process required of high temperature processing such as forming source and drain is finished before an epitaxial silicon film is shifted onto an insulator. CONSTITUTION:An epitaxial film 2 is grown on a P<+> silicon substrate 1 containing boron B with high concentration and after thermal oxidation to form a thermal silicon oxide film 4, boron B is ion-planted and heat treated to form P<+> layers for source. drain. Firstly, the source. drain side of a P<+> silicon substrate 1 are bonded together utilizing a glass layer 6 as an adhesive. Secondly the P<+> silicon substrate 1 only are removed by means of grinding and etching to make the epitaxial silicon film 2 an island. Thirdly a silicon dioxide (SiO2) film 8 and an electrode 9 are formed. Through these procedures, any adhesive materials may be released from the requirements for heat resistance while any anxiety for diffusion of impurities such as boron etc. into epitaxial semiconductor film or pollution may be reduced. |
