| 摘要 |
PURPOSE:To improve transistor driving power, to achieve a high speed and to obtain high reliability, by a constitution, wherein impurity distributions in transistor channel regions, which are formed in the first- and second- conductivity-type element regions on the surface of the first conductivity type semiconductor substrate, are made to be impurity distribution having junctions. CONSTITUTION:In a process, which is close to the initial period for obtaining a CMOS, a polycrystalline silicon film 29 is deposited on the entire surface. After a resist is formed on a well region 22, e.g., phosphorus ions are implanted in the polycrystalline silicon film 29 on a substrate 21 other than the well region 22. Thus, an N-type part is obtained and the resist is removed. After the resist is formed on the substrate 21 other than the well region 22, e.g., boron ions are implanted in the polycrystalline film 29 on the well region 22. A P-type part is obtained and the resist is removed. At a process close to the end, tungsten films 37 are selectively grown on the polycrystalline silicon forming gate electrodes 31 and the like. The gate electrode 31 including the N-type impurities and the gate electrode 31 including the P-type impurities are connected through the tungsten films 37. |
