发明名称 THIN FILM MANUFACTURING DEVICE ACCORDING TO EXCITED VAPOR PHASE DEPOSITION
摘要 PURPOSE:To prevent a thin film from the fall of the characteristic by a method wherein an exciting light source is provided in a reaction tank, and reaction gas is irradiated directly, or mercury vapor is activated in a discharge tank according to electric discharge, and is sent in the communicating reaction tank. CONSTITUTION:Luminous gas is led in a reaction tank 11 by a luminous gas introducing pipe 20. When a high-frequency high voltage is applied to electrodes 13, 14 from a high-frequency electric power source 18, glow discharge is generated. Thereupon light is emitted from luminous gas, and reaction gas is activated according to light having energy necessary to excite reaction gas led in from a reaction gas introducing pipe 21. Thin films are generated on the surfaces of substrates 17 heated by a heating part 15. Luminous gas is exhausted according to exhaust pipes 12a provided nearby the electrodes 13, 14, and moreover reaction gas is exhausted outside of the reaction tank 11 from exhaust pipes 12b provided nearby the heating part 15, and are connected to exhaust systems having respectively different exhausting speeds to be exhausted differentially. Accordingly, enhancement of productivity and enhancement of the characteristics of the thin films can be attained.
申请公布号 JPS59127833(A) 申请公布日期 1984.07.23
申请号 JP19830003264 申请日期 1983.01.12
申请人 KOGYO GIJUTSUIN (JAPAN) 发明人 HAYASHI YUTAKA;YAMANAKA MITSUYUKI;ITOU ATSUO
分类号 C23C16/48;H01L21/205;H01L21/31 主分类号 C23C16/48
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