| 摘要 |
PURPOSE:To improve the characteristics of a diode, and to simplify processes by introducing hydrogen atoms into a polysilicon film and combining hydrogen atoms with parent silicon. CONSTITUTION:The Schottky diode is formed on the polysilicon film containing an impurity in 10<17>-10<18>cm<-3> and hydrogen in 1-20% surface concentration. For example, SiO2 32 is formed on the polysilicon film 33, sections except a diode section 31 are masked, and selectivity is given on an ion implantation and on the adhesion of Pt as a metal. As ions in desired concentration are implanted to polysilicon 33 in the diode section 31. The impurity is activated and thermally treated. Hydrogen ions are implanted to said diode section 31. A substrate temperature is kept for twenty min at 380 deg.C prior to the adhesion of Pt, Pt is attached in 300Angstrom , the substrate is kept for fifteen min at 400 deg.C, and Pt is alloyed, thus forming the Schottky diode. |
