| 摘要 |
<p>PURPOSE:To form a stable high resistance layer easily, and to improve sensitivity to beams of a short wavelength by thinly forming the surface resistance layer of a photosensitive semiconductor layer to a striped shape. CONSTITUTION:A high resistance region of the same conductive type as a predetermined conductive N type semiconductor substrate 11 or an intrinsic semiconductor region 12 is formed on the substrate 11, striped P type regions 13 of a reverse conduction type to the semiconductor substrate 12 are formed on the surface of the region through diffusion in a large number or ion implantation, and P type regions 14 connect the striped regions 13 in parallel, and combine contact regions for electrodes 15. An electrode 16 is formed on the N type semiconductor substrate 11 side. Depletion layers in the lateral direction from the P type regions 13 expand in the clearance sections of stripes in the increase of photocurrents in the clearances of the stripes through carriers generated by the absorption of beams in a short wavelength recombine normally in the P type regions 13 and disappear, and carriers generated in the vicinity of the surface are also changed into drift currents without recombination and contribute to an improvement in sensitivity.</p> |
