发明名称 PLASMA CVD DEVICE
摘要 PURPOSE:To prevent thin films on the surfaces of substrates from damage and reduction of characteristic of the thin films, and to uniformalize film thickness by a method wherein electric discharge electrodes of the plural number of groups are provided in a reaction tank, reaction gas is activated according to glow discharge, and the thin films are formed on the substrates according to active seeds generated according to activation thereof. CONSTITUTION:A heating plate 15 built in with a heater and substrates 17 are provided in a reaction tank 11 in parallel with the arranging direction of the groups of discharge electrodes constructed by placing the discharge electrodes 13, 14 in order interposing an interval between them at the prescribed interval from the discharge electrodes 13, 14. A mesh type electrode 16 is constituted between the discharge electrodes 13, 14 and the heating plate 15, a DC voltage is applied to the shield electrode 16 thereof according to DC electric power sources 19s, 19t to make the shield electrode to have arbitrary potential to the heating plate 15. According to such construction, because the area of the every discharge electrode plate is small, the spatial deflection of the current of reaction gas in the neighborhood of the electrodes is smaller as compared with the case when a pair of electrodes having a large area are installed to generate uniform discharge, and because reaction gas is activated, the substrates are prevented from damage and a temperature rise according to plasma particles, and thin films having uniform film thickness and favorable characteristic can be manufactured.
申请公布号 JPS59127832(A) 申请公布日期 1984.07.23
申请号 JP19830003263 申请日期 1983.01.12
申请人 KOGYO GIJUTSUIN (JAPAN) 发明人 HAYASHI YUTAKA;YAMANAKA MITSUYUKI;ITOU ATSUO
分类号 C23C16/503;H01L21/205;H01L21/31 主分类号 C23C16/503
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