| 摘要 |
PURPOSE:To enable to flatten a substrate at a low temperature by a method wherein, as a flattening process for a CVD film, a reflowing treatment is performed on the film in a phosphorus oxychloride atmosphere at controlled substrate temperature and vapor pressure. CONSTITUTION:A gate oxide film 2 is formd on a silicon substrate 1, a polysilicon gate 3 is formed thereon, and an interlayer insulating film 4 is formed. Then, a PSG film 5 is formed by performing a CVD method. Subsequently, when a flattening process is going to be performed, a reflowing treatment is performed in a phosphorus oxychloride atmosphere of controlled vapor pressure and the substrate temperature. At this time, a reflowing of flattened material is generated at a low temperature. |
