| 摘要 |
PURPOSE:To put lasers of different beam spot shapes into an array on the same substrate by making ridge widths of two semiconductor lasers different to each other. CONSTITUTION:A plurality of pairs of two parallel ridges are formed on the substrate 1. At the time, the ridge widths are set short on one side and long on the other side. A double hetero structure consisting of a clad layer 2, an active layer 3, and a clad layer 4 is formed thereon, and further a current restriction layer 5, a Zn diffused region 8 for current injection, and ohmic electrodes 6 and 7 are formed. Besides, an isolation groove and an insulation film 10 covering its surface are provided between each laser. Since crystal growth is inhibited on the ridge in the case of a small ridge width, the active layer 3 on the small ridge width and the clad layer 2 are thinly formed. Thereby, a circular beam spot for recording can be obtained from the laser of a smaller ridge width, and a long elliptic beam spot for erasure can be obtained from the laser of a larger ridge width. |
