| 摘要 |
PURPOSE:To obtain fundamental single mode oscillation stably even in a high optical output region, and to increase an output from a single mode oscillation laser by constituting an active region (a striped section) of a section having a refractive index sufficiently higher than reluctant partial index variation and a section having a refractive index lower than the variation. CONSTITUTION:In an index waveguide type semiconductor laser, regions consisting of three pairs or more of high index sections and low index sections along the longitudinal direction of a stripe are each formed into one striped region, and the mean equivalent refractive index of the striped section is higher than the equivalent refractive indices of regions adjacent to both sides of the striped section, and differences among them are brought to a small value where there is only one propagating transverse mode permissible in the three regions. The laser is shaped in such a manner that a P-AlxGa1-xAs layer 2, a P-GaAs layer 4 and a P-AlyCa1-yAs layer 11 are grown continuously onto an N-GaAs substrate 1 in an epitaxial manner and parallel fine lines having a period of 1.4mum are drawn onto a resist by using an interference exposure method, developed and etched selectively in approximately 0.3m. |
