| 摘要 |
<p>PURPOSE:To obtain a shielding effect and ligh transmittance equal to or higher than the case that an SnO2 is used by covering the surface of a semiconductor photoreceiving element with an aluminum layer having thickness equal to or smaller than the specific value. CONSTITUTION:P and N type impurities are diffused selectively in a semiconductor substrate 13 to form, for example, a photoreceptor 13a, and a wiring aluminum film 15 formed through an insulating film 14 on the surface of the substrate and further an insulating film 14' formed on the wiring film are formed. An aluminum layer 25 having a thickness of 500Angstrom or smaller is covered on the film 14', and electrically connected to the film 15 via a hole formed at part of the film 14' adjacent to the layer 24. The film 15 is connected to a terminal 3 and grounded. The aluminum layer is formed in a thickness of 500Angstrom or smaller to have a light transmittance and covered on the entire surface except the bonding part 15' necessary for the film 15 to contact a probe for bonding or measuring.</p> |
