| 摘要 |
PURPOSE:To prevent the diffusion of phosphorus into a P type impurity diffusion region from a PSG film, and to improve a contact between an aluminum wiring and the impurity diffusion region by growing a CVD oxide film and hanging down the opening section of the PSG film through heat treatment at a high temperature. CONSTITUTION:A gate oxide film and a gate are formed, the impurity diffusion region 2 is formed, the PSG film 3 is grown as an insulating film and etched, the CVD oxide film 6 is grown on the whole surface, and the contact opening section and the PSG film in a field region are hung down through heat treatment at a high temperature. The CVD oxide film 6 is etched, and the aluminum wiring 5 and the impurity diffusion region 2 are brought into contact. The thickness of the CVD oxide film extends over 1,000Angstrom from 500Angstrom , the diffusion of phosphorus to the impurity diffusion region is not recognized when it is thin, and the PSG film is not smoothed sufficiently in the contact opening section and the aluminum wiring is often disconnected even through heat treatment when it is thick. |
