| 摘要 |
PURPOSE:To obtain a submicroscopic pattern having a high film remaining rate by adding a specified silicon compound to a polymer having unsatd. hydrocarbon having a double bond such as vinyl, allyl, cinnamoyl or acryl in the molecular structure. CONSTITUTION:This resist composition is obtd. by adding 1-50wt% silicon compound represented by one of formulae I -VII (where X is methyl, phenyl, biphenyl or the like, Y is H, hydroxy, azido or the like, and Z is phenyl, hydroxy, vinyl or the like) to a polymer having unsatd. hydrocarbon having a double bond such as vinyl, allyl, cinnamoyl or acryl, epoxy or halogen in the molecular structure. The resist material contg. the silicon compound is etched by plasma treatment at a remarkably reduced etching rate. When the resist material is exposed to radiation such as electron beams, the etching rate is increased. |
