发明名称 |
FIELD-EFFECT TRANSISTOR WITH HIGH CUT-OFF FREQUENCY AND METHOD OF MAKING IT |
摘要 |
There is disclosed a heterojunction field effect transistor with an accumulation of majority carriers functioning as a high cut-off frequency device in which the transistor uses the properties of the same type GaAs/AlxGa1-xAs N-doped junctions with the GaAs being weakly doped. This is used to produce a high mobility of charges in the accumulation layer and is effected by a structure in which the source and drain regions are partially covered by the gate region which is in turn covered by an insulation layer and thereby reduces the access resistances and increases the transition frequencies. |
申请公布号 |
DE3068161(D1) |
申请公布日期 |
1984.07.19 |
申请号 |
DE19803068161 |
申请日期 |
1980.03.14 |
申请人 |
THOMSON-CSF |
发明人 |
DELAGEBEAUDEUF, DANIEL;NUYEN, TRONGH LINH |
分类号 |
H01L21/338;H01L29/08;H01L29/43;H01L29/778;H01L29/78;H01L29/80;H01L29/812;(IPC1-7):H01L29/80;H01L29/10 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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