| 摘要 |
<p>A semiconductor device is provided with at least first and second semiconductor regions having defined therebetween a junction. The first semiconductor region or both of the first and second semiconductor regions are each formed of a semiconductor having a structure in which the degree of crystallization varies spatially. In this case, the first and second semiconductor regions have different conductivity types and form therebetween a PN, PI or NI junction; the first and second semiconductor regions have different energy gaps and form therebetween a heterojunction; the first and second semiconductor regions have different energy gaps, the same conductivity type and form therebetween a heterojunction; or the first and second semiconductor regions have the same conductivity type, different impurity concentrations and form therebetween an HL (High-Low) junction. The semiconductor region having the structure in which the crystallization degree varies spatially is typically formed of a semiconductor which is composed of a mixture of a microcrystalline semiconductor and a non-crystalline semiconductor, the mixture is doped with a dangling bond neutralizer, and the microcrystalline semiconductor has a lattice strain.</p> |
