| 摘要 |
<p>PURPOSE:To execute cutting neatly as well as to prevent the influence upon the protective film by forming the part of a fuse film to be cut so as to be thinner than the rest of the film. CONSTITUTION:A part to be cut of a fuse film of a polysilicon layer 2 is formed as a cavity 2e by etching technique. In the cavity 2e, thickness of the polysilicon at the bottom 2f is thinner than the other part by one fourth or third. A PSG film 3 is grown on the layer 2 as a protective film. When the laser beam is made to irradiated, the bottom 2f is heated sooner as its film thickness is thin and this heat is hard to give off compared with the heat generated in other part of thick film thickness. The fused polysilicon is poor at wetting for the SiO2 film 2 and is good for the other silicon part so that it is finely absorbed by the polysilicon layer on both sides of the part 2f and there is no influence upon the PSG film 3.</p> |
