| 摘要 |
PURPOSE:To etch anisotropically Mo or MoSi2 favorably by a method wherein Cl2 gas is used, a substrate is held at the specified temperature, and the quantity of a deposit adhered on the upper face and the side of the etching part is balanced appropriately. CONSTITUTION:When reactive ion etching is to be performed to Mo or MoSi2 using Cl2 gas, a non volatile product NoClx (x=1-5) 30 covers the whole surface to obstruct the advance of etching when the temperature of a substrate is 10 deg.C or less. Nevertheless, when the temperature of the substrate is held at 10- 80 deg.C, the deposit 30 becomes to be easily evaporatable, the upper surface of a conductor 12 is exposed to reaction gas according to the impact of ions in the vertical direction, and the deposit 30 leaves on the side to result in anisotropic etching. When the temperature exceeds 80 deg.C, the deposit on the side is also evaporated, and isotropic etching is performed to generate eaves. According to this construction, superior anisotropic etching can be performed to Mo, MoCl2 even in a high gas pressure region having strong etching selectivity without using CCl4 being hard to deal with. |
