| 摘要 |
PURPOSE:To obtain a high resistance AlGaAs layer, by implanting O2 ions together with a VI group element in the surface of an AlGaAs layer, which is coated by GaAs, and thereafter performing heat treatment so as to obtain an inactive state. CONSTITUTION:On a semiinsulating substrate 1, to which Cr is added, nonadded AlxGa1-xAs (x is 0.2-0.4) 7 and nonadded GaAs 8 are continuously grown by a molecule beam epitaxial method. Then Se ions of a VI group element are implanted, and then O2 ions are implanted. The surface of the layer 8 is coated by an Al thin film by a reactive sputtering method, and heat treatment is performed at 625-850 deg.C. In this constitution, Se, which is activated in AlGaAs, can be made inactive by O2; carrier distribution is strikingly decreased in AlGaAs; and high resistance can be maintained. O2 does not perform inactivation in GaAs. Therefore, when this constitution is applied to the double structure of GaAs-AlGaAs in a GaAs FET, a high frequency power element, which is free from the effect of noises, can be obtained. |
