The manufacture of semiconductor devices.

摘要

To produce a device including metal silicide interconnections, a metal silicide layer (12) is selectively formed on a silicon layer, which is then heat treated so that a surface silicon dioxide layer (13) is formed and the metal silicide layer (12) is forced down and is buried under the silicon dioxide layer. The resulting silicon dioxide layer has a desirably even top surface, facilitating the satisfactory addition of further layers of the device.