| 摘要 |
PURPOSE:To grow a semiconductor film on a substrate preventing a window from adhesion of an undesired product when the ultraviolet rays transmitting substrate is to be arranged facing to the ultraviolet rays transmitting window provided in a reaction chamber by a method wherein an interval between them is made extremely small to prevent a gap between them from creeping in of reaction gas. CONSTITUTION:The substrate doorway of a reaction chamber 1 having a reaction gas feed pipe 4 and an exhaust pipe 5 is blockaded with a cover body 3 enabled opening and shutting freely, and a light transmitting window 2 consisting of magnesium fluoride enabled to transmit favorably an ultraviolet laser light is arranged facing to the cover body thereof. Then a sapphire substrate 6 provided with an Si3N4 film 11 to absorb ultraviolet rays at the circumference is arranged facing to the window 2 thereof, while at this time, the circumference of the substrate 6 is pasted directly to the window 2. After then, carrier gas such as SiH4 and H2, etc., is flowed in the reaction chamber 1, and at the same time, an ultraviolet laser light 8 is irradiated to the substrate 6 through an optical system 7. Accordingly, contamination of the window 2 is avoided. |
