| 摘要 |
PURPOSE:To obtain the semiconductor device with a Schottky barrier gate type electrode, which can allow a latitude in SBH (Schottky barrier height) and can prevent the generation of a polyflower phenomenon, and a wiring as an extension of the electrode. CONSTITUTION:The device has electrodes and wirings in which a titanium layer 14, an aluminum group metalic layer 15 (an aluminum layer or a layer consisting of an alloy of aluminum and silicon or magnesium or copper or the like), a barrier layer 16 consisting of a conductive nitride or carbide (a nitride of hafnium or tantalum or vanadium or the like or carbide of hafnium or tantalum or vanadium or molybdenum or tungsten or a nitride or carbide of titanium or a compound of titanium and tungsten) and an aluminum group metallic layer 17 (an aluminum layer or a layer consisting of an alloy of aluminum and silicon or magnesium or copper or the like) are laminated in said order. |
