发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the occupying area of a chip, and to make discharge current values from a positive side word line W<+> and a negative side word line W<-> independent by connecting an emitter of a P-N-P transistor constituting a thyristor to the positive side word line and connecting an emitter of an N-P-N transistor to a constant-current source. CONSTITUTION:The positive side word line W<+> is connected to an anode terminal 401 for a silicon control rectifying element SCR40 as a P-N-P-N element, a cathode terminal 402 for the SCR is connected to the constant current source 42 in common with a cathode terminal for an SCR regarding other words, and a collector of a transistor Q3 for discharge is connected to the negative side word line W<->. The cut-off of discharge currents of the W<-> line can be delayed from the change of a selection or a nonselection for the W<+> word line by utilizing a slow discharge response of the SCR, and the occupying area of the chip can be reduced, and discharge currents from the positive side word line W<+> and the negative side word line W<-> can be set independently.
申请公布号 JPS59124756(A) 申请公布日期 1984.07.18
申请号 JP19820233779 申请日期 1982.12.29
申请人 FUJITSU KK 发明人 OKAJIMA YOSHINORI
分类号 G11C11/414;G11C11/415;H01L21/8229;H01L27/102 主分类号 G11C11/414
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