| 摘要 |
PURPOSE:To improve conversion efficiency, and to manufacture the photovoltage cell at low cost by joining a unit cell consisting of an amorphous semiconductor with the amorphous semiconductor hetero-junctioned with the single crystal or polycrystalline crystal system semiconductor. CONSTITUTION:K+2C (K=1 or 2 and C is zero or an integer) P type polycrystalline semiconductors 11p and at least each one of P type, I type and N type 2-K+3A (A is an integer) amorphous or crystallite semiconductors 20n are hetero-junctioned HJ, thus forming the unit cell. P type amorphous silicon (P-aSi) 21p, I type amorphous silicon (I-aSi) 21i and N type amorphous silicon (N-aSi) or N type crystallite silicon (N-thetaC.Si) 21n constitute an amorphous unit cell P-I-N joined. A transparent conductive film 10 as an electrode is formed on the semiconductor 21n. The unit cell of the semiconductor 20n absorbs light on the short wavelength side in incident light, and the semiconductor 11p absorbs light on the long wavelength side, thus effectively utilizing light extending over a wide range by the single photovoltaic cell. |
