| 摘要 |
PURPOSE:To enable to attain microscopic wirings by a method wherein the pattern of aluminum film or the alloy film thereof, which has been coated on a substrate, is formed by using the thin film pattern of copper, gold, silver, platina or the alloy of them as the mask. CONSTITUTION:An aluminum film 11 is coated on a semiconductor substrate 1 through the intermediary of an insulating film 2 and copper thin films 12 are coated on the top surface of the aluminum film 11. Resist film patterns 13 are formed and the copper thin films 12 exposed by an ion-beam etching performed using inert ions or a reverse sputter etching are removed by performing an etching. Metal is easy to be etched, while such organic material films as a resist film are difficult to be etched. A reactive ion etching according to chlorine series gas is performed using the patterns of the copper thin films 12 as the mask and the aluminum film 11 is etched. The wirings on the aluminum film 11 are completed by removing the copper thin films 12. |
