Method of patterning device regions by oxidizing patterned aluminum layer

摘要

A pattern utilized to prepare a diffraction grating, or an element of a semiconductor device, for example a silicon island, or a device isolation pattern or a semiconductor element, such as a MOS FET, is formed by the steps of forming an oxidizable region of a predetermined pattern on a substrate and oxidizing the oxidizable region for forming an oxide region pattern in at least a portion of the sidewalls of the oxidizable region. The resulting pattern, which is extremely fine and formed at a low cost, has a sufficiently large height with respect to its width. Furthermore the pattern can be formed at a relatively low temperature.