| 摘要 |
<p>PURPOSE:To enable to prevent the chipping at the times of chip-division and chip-mounting by a method wherein the scribing region used for chip-division, one of the regions on a dielectric isolation substrate, is all formed with a semiconductor single crystal layer. CONSTITUTION:Isolating grooves 12 are formed on a single crystal silicon substrate 11 and an oxide film 13 for insulating isolation is coated. The insulating isolation oxide film 13 on a scribing region 14 is removed and a supporting body layer 17 on a dielectric isolation substrate is deposited under the growth condition that a single crystal silicon 16 and polycrystalline silicons 15 can be simultaneously grown by a thermal decomposition method or a reduction method of a hydride SiH4, a chloride SiCl, SiH2Cl2, SiHCl3, etc. A dielectric isolation substrate 19 having single crystal silicon regions 18, polycrystalline silicon layers 15 and the scribing region 14 which all consists of a single crystal silicon layer is obtained by abrading the supporting body layer 17 up to the position indicated by broken lines.</p> |
