| 摘要 |
PURPOSE:To contrive to improve the conversion efficiency by a method wherein a semiconductor having a CTF and a P-I-N junction formed of a P layer, an I layer, and an N layer and a back surface electrode are provided on the projection and recess surfaces of a glass substrate. CONSTITUTION:The projections 13 and the recesses 14 are provided on the main surface of the photo transmitting substrate 1, and the projection is circular and has a height difference of 300-4,000Angstrom . The amorphous semiconductor added with hydrogen or a halogen element is provided on the P type non-single crystal semiconductor 5 obtained in close contact with the CTF 2 on this uneven surface by a plasma CVD method, and moreover the non-single crystal semiconductor 4 having one P-I-N junction composed of N type polycrystalline Si semiconductor 7 is provided. The second CTF9 is formed thereon, and a reflection electrode 19 is provided thereon. The rate of the extended area of the projection 14 / extended area of the recess 13 is 0.2-5, and, the conversion efficiency can be improved by scattering a reflected light on the surface and reducing the reflection at the interfaces between the CTF2 and the semiconductor 5, and between the substrate 1 and the CTF. |
