| 摘要 |
PURPOSE:To improve the selectivity in dry etching by mounting a sample on one of a pair of electrodes placed opposite to each other in a chamber and by enclosing the periphery of the other with an insulator. CONSTITUTION:A discoid counter electrode (anode) 2 and a discoid cathode 3 are placed opposite and parallel to each other in a chamber 1, a mask 4 is mounted on the cathode 3, and the mask is coated with a Cr film of about 0.07-0.1mu thickness and a resist film of about 0.6-1.0mum thickness. The periphery of the anode 2 is enclosed with an insulator 10 so that the insulator is extended from the edge of the cathode 3 to the outside. A gaseous mixture of CCl4 with O2 is introduced into the chamber 1 and activated to carry out reactive ionic etching. The Cr film can be etched faithfully in accordance with the pattern and the selectivity is improved by about 30%. |
