| 摘要 |
PURPOSE:To markedly increase the thermal resisting property of a substrate as well as to facilitate the formation of a semiconductor film having a large area by a method wherein, after an infrared ray laser has been selectively made to irradiate on the surface of a substrate made of a high molecular material having the cyano group as a side chain, a semiconductor film is formed by soaking said substrate into the mixed aqueous solution of bivalent copper salt and the reducing agent containing sulfur. CONSTITUTION:When an infrared ray laser is selectively made to irradiate on the molecular material having a cyano group as side chain, the tripple bond of C and N is turned to double bond in the region where the above laser irradiation is applied. When the above is soaked into the mixed solution of a bivalent copper salt aqueous solution and a reducing agent aqueous solution containing sulfur, the formation of semiconductor thin film of coprous sulfide, generating from the formation of complex of a cyano group and a copper ion, is suppressed in the selectively irradiated region, and a semiconductor film is formed in an adhesive manner on the surface of the material other than the irradiated region. Pertaining to the bivalent copper salt to be used, CuSO4, CuCl2, Cu(CH3COO)2, Cu(NO)2 and the like are considered to be suitable, and as a reducing agent, thiosulfide acid, sodium thiosulfate, hydrazine-hydrogen sulfide, and the like which contain sulfur atom are considered to be suitable. |
