| 摘要 |
PURPOSE:To obtain the growing method with which an interlayer isolation can be easily performed by a method wherein a semiconductor crystal layer is grown on a substrate after a material different from that of the substtrate has been buried in the groove located on the surface of the compound semiconductor substrate. CONSTITUTION:A photoresist pattern is formed on a semiinsulating Cr-doped GaAs substrate 1, and a groove 2 is formed thereon using an ion milling. Subsequently, an SiO2 film 3 is grown in the thickness same as the depth of the groove 2 is grown on the whole surface by performing a CVD method, a photomask wherein the above- mentioned pattern is inverted is applied, and an etching is performed on the SiO2 film 3 using the solution consisting of NH4F:Hf=5:1. As the SiO2 film 3 is grown in the thickness same as the depth of the groove 2, the SiO2 film 3 is filled in the groove 2 after etching and a flat surface can be obtained. An N-GaAs layer 4, which will be turned to an active layer, is grown on the substrate 1 obtained as above by performing an MBE method. A polycrystalline GaAs 5, which is in the thickness same as the N- GaAs layer 4 of an active layer is grown on the SiO2 film 3. As said GaAs 5 is a polycrystalline film, it is highly resistant, and its characteristics are not changed by performance of a heat treatment. |
