| 摘要 |
PURPOSE:To enable to perform a microscopic processing easily at low cost of production without using an expensive equipment by a method wherein an oxide film is formed in such a manner that a part where the thickness film is thinner than the other part is generated at the corner part only of a raised part or a stepped part of the material to be processed and that the oxide film on said corner part alone will be removed. CONSTITUTION:A semiconductor substrate 1, having angular rugged surface is oxidized by heating in O2 gas atmosphere or in an O2 gas atmosphere containing steam, and an oxide film 2 is formed on the whole surface. By performing the above oxidation process, the oxide film at the corner A part of the raised part is formed in the 1/2-1/3 thickness when compared with the thickness of the other plane-surfaced region such as the top face and the side face of the raised part and the botton face of the recessed part. When the semiconductor substrate 1 whereon the oxide film 2, which is thinner than the other part, is soaked in the etchant to be exclusively used for oxide film, the oxide film 2 on the corner part alone is removed, and an aperture part B is formed on the oxide film 2. In this case, the time required for etching becomes 1/2-1/3 of the time required for complete removal of the film thickness (t) of the SiO2 film which is flatly formed. |
