| 摘要 |
<p>PURPOSE:To prevent the exfoliation of a platinum silicide layer and the warpage of a semiconductor substrate by forming a hole at the center of a thin oxide film formed on a grid line part, forming a metal layer in the hole, and forming a passivation film on the metal layer. CONSTITUTION:A relatively thin oxide film 15 formed on a part A which forms a grid line is an oxidized film formed simultaneously when forming an impurity diffused region formed on a semiconductor substrate 11. Then, a hole 21 is formed at the center of the film 15 in a contact photolithographic step. At this time, the width l of the hole 21 is sufficiently thinly set to the width L of the grid line formed before the contact photolithographic step. Then, when a metal layer of an electrode material is deposited on the overall surface including the hole 21 and heat treated, two-metal alloy of the substrate 11 and the metal is formed. Subsequently, when the metal is etched and removed, the two-metal alloy of the silicon and the metal formed on the hole 21 remains without removal. Thereafter, a passivation film is formed on the overall surface of the substrate 11, part is then etched and removed, and a PSG film on the two-metal alloy remains.</p> |
