| 摘要 |
<p>PURPOSE:To eliminate the occurrence of the thermal fatigue of an electrode even if pressure contact takes place by forming at least 3-layer structure of electrodes, and forming the lowermost electrode layer of metal ohmically contacted with a semiconductor substrate, hard metal of an intermediate electrode layer, and soft metal of the uppermost electrode layer. CONSTITUTION:An emitter electrode 12 is formed of the lowermost electrode layer 13, the intermediate electrode layer 14 and the uppermost electrode layer 15. In the emitter electrode 12, the layers 13, 15 are formed thinly of aluminum, and the layer 14 is formed thickly of high melting point metal such as Mo or Ti. According to such structure of electrode 12, most is formed of the high melting point metal. Accordingly, even if considerable pressure contact occurs at high temperature, the shape collapse and softening of the electrode 12 do not occur.</p> |
