发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the discoloration of a bonding pad and the deterioration of its bonding property by a method wherein the surface made of aluminum exposed by selectively etching a PSG film is dipped in the etchant of the solution of ammonium hydroxide or its derivative, thus slightly etching the surface thereof. CONSTITUTION:The PSG film 12 is adhered over the entire surface on a wafer 10 equipped with an aluminum wiring layer 11. Next, a photo resist 13 is adhered on the surface of the wafer 10, and this photo resist 13 is etched into a fixed mask pattern. Successively, the wafer 10 is dipped in the etchant of NH4F (ammonium fluoride) solution with the resist 13 as a mask, and the PSG film 12 is etched so that the bonding pad part 11B of the aluminum wiring layer 11 exposes. Then, this wafer 10 is dipped in the solution of ammonium hydroxide. At this time, the surface of the exposed aluminum wiring layer 11 is slightly etched, and the discolored part 14 is removed.
申请公布号 JPS59121845(A) 申请公布日期 1984.07.14
申请号 JP19820234029 申请日期 1982.12.27
申请人 TOSHIBA KK 发明人 MUTSUYAMA AKINARI
分类号 H01L21/306;(IPC1-7):01L21/306 主分类号 H01L21/306
代理机构 代理人
主权项
地址