| 摘要 |
PURPOSE:To improve sensitivity by simple structure by arranging a magnetic substance of large permeability in response to a pattern surface of a magneto- resistance pattern formed by a nonmagnetic substance. CONSTITUTION:The magneto-resistance pattern 2 is formed by the nonmagnetic substance (such as Cu, Sn, etc.), and a ferromagnetic substance (such as Ni1-xFex) 3 is arranged in response to the surface of the pattern. A thin-film insulator 4 interposed between the magneto-resistance pattern 2 and the ferromagnetic substance 3 is formed. When a magnetic field is applied to the element of such structure from a surface A, magnetic flux density B in the same extent as conventional devices is added to the magneto-resistance pattern 2 from the spontaneous magnetization of the ferromagnetic substance 3. Consequently, a conductor, electron density n and relaxation time tau thereof are large and effective mass m* thereof is small, can be selected as the magneto-resistance pattern 2 as known from magneto-resistivity rho. When the magneto-resistance pattern 2 is formed by the nonmagnetic substance, such as Cu, Sn, etc., a large magneto- resistance change can be obtained, and the sensitivity of the element can further be improved. |
