| 摘要 |
PURPOSE:To form a sub-micron order fine pattern by a method wherein a resist film formed on an object on which the pattern is to be formed is exposed by far ultraviolet rays, and an aperture reaching the object is formed by dry-developing the entire surface of the resist film, after wet development to the degree that the resist film remains at the bottom of the aperture to be formed. CONSTITUTION:A mask 3 is prepared by means of a glass. Light does not pass through the parts 4 of the mask 3 but passes through the part 5. Using such a mask, the resit film 2 of a substrate 1 is exposed. Said far ultraviolet ray of 260nm-300nm is used for the exposure. Since the mask has 20%-50% of transmittance to such a light, the suitable selection of the exposure time causes the part corresponding to the part 5 of the mask for the resist film to be in the state of no exposure at all. When such a resist film 2 is wet-developed with an etchant, a part 2a of the thickness of 3,000Angstrom remains, without development, under the aperture 6 formed by etching. Next, performing dry development with e.g. oxygen plasma enables to obtain the resist pattern wherein an aperture 6a reaching the substrate 1 corresponding to the aperture 6 is bored. |
