| 摘要 |
PURPOSE:To enable to largely reduce the length of charge transfer direction by forming a deep section of a potential well to become a charge storage unit under a transfer electrode and a deep section of a potential well to become the barrier of stored charge, thereby forming the potential under one transfer electrode. CONSTITUTION:When P type impurity ions are implanted with first transfer electrodes 32, 33 formed on a thin insulating film 34 as masks, its potential rises as an arrow (a). Then, the electrodes 32, 33 are slightly displaced to form resists 32a, 33a, P type impurity ions are implanted to pass the electrodes 32, 33 by increasing the accelerating voltage faster than that at the first time. Then, the potential rises as arrows (b), (c). Subsequently, with the electrodes 32, 33 and the resists 32a, 33a as masks N type impurity ions are implanted. Then, the potential is deepended as an arrow (d). When the second transfer electrodes 36-38 are patterned, the potentials under the first electrodes 32, 33 and the second electrodes 36-38 become the same shape, and become the shape having a charge storage unit 39 and a barrier unit 40. |
