| 摘要 |
PURPOSE:To enable to image-draw at a high accuracy by contriving to improve the correction accuracy of proximity effect by a methd wherein the position of a sample point for the determination of the amount of exposure correction is selected by considering the influence affected by peripheral patterns. CONSTITUTION:A frame (one dot chain line) which shows the range of the influence on a pattern PA is set up in the periphery of the pattern PA, and patterns PB, PC, and PD existent in this frame are extracted. At the time of placing the sample points of the right side of the pattern PA, the pattern PC and the pattern PD except for the pattern PB which contacts the pattern PA are picked up, and points (c) and (d) on the right side of this pattern PA which correspond to medium points of sides LC and LD of both the patterns opposed to the pattern PA are selected. In comparison of influences given on these two points (c) and (d), i.e., exposure strengths FC and FD, a larger one is selected. In this case of this embodiment, the point (c) is selected as the sample point for the pattern PA. As for the influence of a pattern not existent in the extended frame of said each side, i.e., the pattern PE, the exposure strengths FE and FF at the medium point (e) of the upper side of the pattern PA and at the medium point (f) of the left side are compared with each other, thus selecting a larger one (the point (e) in this embodiment). The influence from the other pattern corresponding to this sample point is obtained by calculation, and then the amount of dimensional correction and that of irradiation are so determined that the energy strength at each sample point becomes a fixed development strength. |
