| 摘要 |
PURPOSE:To improve S/N by a method wherein a polycrystalline silicon layer is formed on the portion where the internal waveform is measured and a contact aperture is formed on the layer and the aluminum film is deposited. CONSTITUTION:An oxide film 7 is formed on a silicon substrate 6 and a polycrystalline film 8 is formed on the portion where the internal waveform is measured by a stroboscanning electron microscope. Then an oxide film 9 is formed on the polycrystalline silicon film 8 and a contact aperture 10 is formed in this oxide film 9 and an aluminum film 11 is formed to provide wiring. When the internal waveform is to be measured, if an electron beam 3 is applied to an edge portion 12 of the contact aperture 10, as the edge portion 12 is slightly inclined, the secondary electron 4 emitted from here can be efficiently detected by a secondary electron detector 5 so that S/N is improved. |
