| 摘要 |
PURPOSE:To utilize the time required for the carrying of a wafer in a wafer process effectively by removing a resist in the wafer during the carrying of the wafer before executing processes after the resist removal process. CONSTITUTION:When an ion implantation process C is completed, a gate-way 24b for the wafer is opened and the wafer is encased in a plasma-asher 24, the supply of oxygen is started instantaneously, and power is fed to the plasma-asher. A wafer conveyor 21 is forwarded to the section of a CVD process E at the same time as the power supply. The time required for ashing a resist film is decided previously by an experiment, the device 21 is made reach to the section of the CVD process E for the time slightly exceeding the time, and a polysilicon gate is formed through the CVD process. Accordingly, since the resist removal process D is executed on its midway to the CVD process E from the ion implantation process C, the time required for manufacturing an IC is utilized effectively, and yield on manufacture is improved. |
