| 摘要 |
PURPOSE:To improve the conductivity of a wiring layer formed in a semiconductor substrate by forming a structure that a wiring layer is formed through an insulating film on a metal silicide wiring layer formed in a silicon substrate. CONSTITUTION:A window is opened at an SiO2 film 16 formed on a silicon substrate 11, a wiring layer region buried in a silicon substrate is exposed, and a molybdenum film 17 is coated by depositing in vacuum from above. Then, when it is heat treated in nitrogen, the silicon and the molybdenum are reacted to form an MoSi2 layer 12. Then, when it is etched with a mixture solution of heated nitric acid and phosphoric acid, the film 17 on the film 16 is removed, but the MoSi2 layer is not etched. Then, when heat treated in high moisture oxidative gas stream, an SiO2 film 13 is produced. In this case, the thickness of the MoSi2 film does not vary but is buried in the silicon substrate as it is, and the thickness of the film of the SiO2 film becomes the same as that on the silicon and on the MoSi2 layer. Then, the film 13 is opened with a window by ion etching, an aluminum film is covered, thereby forming aluminum wiring layers 14, 15 to obtain crossing wiring layers of low resistance. |
