| 摘要 |
PURPOSE:To attain stable dark current compensation by separating an optical black section and an effective picture element section by a semiconductor layer different from a substrate so as to prevent a signal charge generated under the effective picture element from being diffused to the optical black section. CONSTITUTION:Photosensitive sections 2-1-2-(n+3) are formed on a P type silicon substrate 1b. The optical black section s formed by providing a metallic electrode 4-1 via an oxide film 3 so as to shield optically the optical black section. The optical black section and the effective picture element section are separated by an n type semiconductor layer 1a formed so as to reach the surface of the P (type) silicon substrate 1b. Even if the signal charge generated under the effective picture element near the optical black section is diffused equally, the charge is not leaked to the optical black section to obtain the stable dark current compensation. |
