| 摘要 |
PURPOSE:To reduce the occurrence of a crystalline defect by employing a semi- insulating GaAs crystal which contains an indium as a substrate crystal. CONSTITUTION:An indium is added in the step of manufacturing a GaAs crystal. The GaAs crystal which includes In has low point defect density and dislocation density, the distribution in the plane and an ingot in the length direction becomes uniform, and the uniformity of the element characteristics in the substrate is improved. After an ingot having the indium is obtained, a wafer is cut, and mirror finishing or the like is performed to prepare a GaAs substrate 1. Thereafter, silicon is implanted by an ion implanting method on the substrate to form a conductivity active layer 2. After the active layer is formed, source S, drain D and gate G are formed by metal depositing or alloying method, thereby manufacturing a GaAs FET. |
