| 摘要 |
PURPOSE:To improve yield on the manufacture of the MOS type semiconductor device with a gate electrode pattern in submicron width by using ultraviolet rays and a step-and-repeat system. CONSTITUTION:A silicon dioxide film 2 is grown on a silicon substrate 1 through a method such as thermal oxidation, a polycrystalline silicon layer 3 is grown on the whole surface through a method such as a CVD method, a resist is applied on the whole surface and the resist is patterned to form a resist film 4, and the polysilicon layer 3 is etched while using the resist film 4 as a mask. The width of the polysilicon layer 3 is formed to 1.0mum by forming a gate through the step-and-repeat system using ultraviolet rays. An SiO2 film 5 is etched through anisotropic etching. A thermal nitride film 6 is grown on the whole surface by using a high temperature in a nitriding atmosphere such as ammonia. The thermal nitride film 6 is grown on the whole surface of the polysilicon layer 3 and the surface of substrate silicon. The ions of a desired impurity are implanted through an ion implantation method. Sections 7, 8 shown by broken lines in the substrate 1 represent regions in which impurity ions are implanted. Heat treatment is added, impurity layers are activated, and diffusion regions 7a, 8a are formed. |
