发明名称 METHOD FOR GROWING CRYSTAL
摘要 PURPOSE:To enable the pulling of a long crystal having little growth stripes, by charging a molten liquid for crystal growth and a hollow cylindrical crystal consisting of the material same as the molten liquid in a crucible, contacting a seed crystal to the molten liquid in the hollow part of the cylindrical crystal, and carrying out the growth of crystal. CONSTITUTION:The crystal growth apparatus is composed of a shallow crucible 1 containing the molten liquid 16 for the crystal growth, a hollow cylindrical replenishing material 4, a pair of rods 5 connected to the cylindrical material 4, and a pair of supporting devices 3 attached to the top of the apparatus 2 and slowly lowering the replenishing material 4 concentrically into the crucible 1. The replenishing material 4 is composed of the same material as the molten liquid 16, e.g. polycrystalline Si. According to the pulling of the single crystal 17, the molten liquid 16 is replenished by alowly lowering the replenishing material 4 into the molten Si in the crucible, and the crystal growth is carried out by contacting a single crystal 17 to the molten liquid 16 in the hollow part of the replenishing material 4.
申请公布号 JPS59121184(A) 申请公布日期 1984.07.13
申请号 JP19820228735 申请日期 1982.12.28
申请人 FUJITSU KK 发明人 TAKIZAWA RITSUO;FUKUDA TETSUO;HONDA KOUICHIROU;OOSAWA AKIRA
分类号 C30B15/00;C30B15/02;H01L21/208 主分类号 C30B15/00
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