| 摘要 |
PURPOSE:To prevent the adhesion of crystal to the capillary die for the pulling of a silicon ribbon crystal, and to enable the stable growth of the titled crystal for a long period, by placing a pair of protrusions to the top of the die at both lengthwise ends. CONSTITUTION:One end of the capillary die 13 having a slit is immersed in the molten Si 12 in the crucible 11, and a seed crystal is brought into contact with the liquid 12 ascending through the die slit. A ribbon Si crystal is grown by pulling the seed crystal. A pair of protrusions 16a, 16b are attached to the top of the die 13 at both lengthwise ends, and are heated by CO2 gas lasers 19a, 19b. The gas-liquid interface at the both lengthwise ends of the die 13 is raised by this arrangement, and the problem to unable the continuous growth of the crystal by the gradual narrowing of the width of the ribbon crystal can be solved. The height of the solid-liquid interface can be maintained at a high level. |
