Process of fabricating p-n junctions for tunnel diodes,申请号US19620241077-传众专利搜索

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发明名称	Process of fabricating p-n junctions for tunnel diodes
摘要
申请公布号	US3219497(A)	申请公布日期	1965.11.23
申请号	US19620241077	申请日期	1962.11.29
申请人	SHANNON PAUL E V	发明人	SHANNON PAUL E. V.
分类号	H01L21/00;H01L29/00;H01L29/88	主分类号	H01L21/00
代理机构		代理人
主权项
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