发明名称 BLOCK REPLICATOR OF ION IMPLANTATION BUBBLE DEVICE
摘要 PURPOSE:To increase bubble generating current and to expand phase margin by coupling a cusp of a major line and that of a minor loop folded like a U-shape through a conductor pattern and forming a pattern cutting a bubble between both said cusps. CONSTITUTION:If pulse current I1 is made flow into the conductor pattern 31 when a rotating magnetic field Hr is located in the direction of an arrow 41 as shown in Figure (a) and a bubble B approaches the point of the minor loop 32 (timing t1), the bubble B is expanded as shown in Figure (b) and reaches the cusp 35b of the major line 33 (timing t2). Subsequently, current I2 is impressed to the pattern 31, and when the magnetic field Hr is located in the direction of an arrow 43 (t3), the current I2 is interrupted. In the phase of the magnetic field at the timing t3, repulsion charge walls B4 are generated on both the sides of a V-shape type non-ion implantation area 34 and the bubble is divided into two parts shown by slash parts B2, B3, which are absorbed by charged walls (unshown) generated on the points of the cusp 35b of the major line 33 and the cusp 35a of the minor loop 32. Thus, the bubble B is replicated by the major line 33.
申请公布号 JPS59121683(A) 申请公布日期 1984.07.13
申请号 JP19820228701 申请日期 1982.12.28
申请人 FUJITSU KK 发明人 MATSUDA KAZUO;SATOU YOSHIO;MIYASHITA TSUTOMU;OOHASHI MAKOTO;BETSUI KEIICHI
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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