| 发明名称 |
SEMICONDUCTOR DEVICE, IN PARTICULAR FOR PHOTOELECTRIC PURPOSES |
| 摘要 |
<p>Semiconductor device, such as photocell, comprising an amorphous layer containing oxygen with ratio of 1 or lower of number of atoms thereof to silicon atoms, thereby attaining a satisfactory dark current characteristic and a large band gap.</p> |
| 申请公布号 |
EP0035146(A3) |
申请公布日期 |
1984.07.11 |
| 申请号 |
EP19810100992 |
申请日期 |
1981.02.12 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ISHIHARA, SHINICHIRO;MORI, KOSHIRO;TANAKA, TSUNEO;NAGATA, SEIICHI |
| 分类号 |
C23C16/40;H01L27/146;H01L31/075;H01L31/09;H01L31/20;(IPC1-7):01L31/08;01L27/14;01L31/18;01L31/02 |
主分类号 |
C23C16/40 |
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