Semiconductor device and process of producing the same

摘要

A semiconductor device has a surface protective film (18) having a high blocking capacity against contaminating ions and a high shielding effect against an external electric field, which film consists essentially of an amorphous or polycrystalline silicon carbide containing at least one element selected from the group consisting of hydrogen, nitrogen, oxygen and a halogen. The semiconductor device may include a mesa, and the protective film may be formed on the inner surface of the mesa groove.